DMP1045U new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -12v 31m ? @ v gs = -4.5v 5.2a 45m ? @ v gs =-2.5v 4.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? analog switch features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? esd protected up to 3kv ? "green" device, halogen and antimony free (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0072 grams (approximate) ordering information (note 3) part number case packaging DMP1045U-7 sot-23 3,000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. marking information date code key year 2010 2011 2012 2013 2014 2015 code x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected to 3kv top view internal schematic pin configuration d g s sot-23 source gate drain gate protection diode 15p = marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) 15p ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol v alue units drain-source voltage v dss -12 v gate-source voltage v gss 8 v continuous drain current (note 4) v gs = -4.5v steady state t a = 25c t a = 70c i d 4.0 3.1 a continuous drain current (note 4) v gs = -2.5v steady state t a = 25c t a = 70c i d 3.3 2.6 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d 5.2 4.2 a continuous drain current (note 5) v gs = -2.5v steady state t a = 25c t a = 70c i d 4.3 3.4 a maximum continuous body di ode forward current (note 5) i s 2 a pulsed drain current (10us pulse, duty cycle=1%) (note 4) i dm 40 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol v alue units total power dissipation (note 4) p d 0.8 w thermal resistance, junction to ambient (note 4) r ja 168 c/w total power dissipation (note 5) p d 1.3 w thermal resistance, junction to ambient (note 5) r ja 99 c/w thermal resistance, junction to case (note 5) r jc 14.8 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -12 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25 c i dss - - -1.0 a v ds = -12v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) -0.3 -0.55 -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 26 31 m ? v gs = -4.5v, i d = -4.0a 31 45 v gs = -2.5v, i d = -3.5a 45 75 v gs = -1.8v, i d = -2.7a forward transfer admittance |y fs | - 12 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.6 - v v gs = 0v, i s = -1a dynamic characteristics (note 7) input capacitance c iss - 1357 - pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss - 504 - pf reverse transfer capacitance c rss - 235 - pf gate resistnace r g - 14.1 - ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics (note 7) total gate charge q g - 15.8 - nc v gs = -4.5v, v ds = -10v, i d = -4a gate-source charge q gs - 2.0 - nc gate-drain charge q gd - 3.9 - nc turn-on delay time t d(on) - 15.7 - ns v ds = -10v, v gs = -4.5v, r l = 2.5 , r g = 3.0 turn-on rise time t r - 23.3 - ns turn-off delay time t d(off) - 91.2 - ns turn-off fall time t f - 106.9 - ns notes: 2. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 3. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate DMP1045U product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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